GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: C6 62mm
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
кількість в упаковці: 10 шт
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Технічний опис GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Case: C6 62mm, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Collector current: 100A, Pulsed collector current: 200A, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Mechanical mounting: screw, кількість в упаковці: 10 шт.
Інші пропозиції GD100PIY120C6SN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD100PIY120C6SN | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: C6 62mm Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 200A Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw |
товару немає в наявності |