GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Technology: Advanced Trench FS IGBT
Collector current: 100A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Technology: Advanced Trench FS IGBT
Collector current: 100A
Case: C6 62mm
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 10 шт
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Технічний опис GD100PIY120C6SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Technology: Advanced Trench FS IGBT, Collector current: 100A, Case: C6 62mm, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Semiconductor structure: diode/transistor, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Mechanical mounting: screw, Type of module: IGBT, кількість в упаковці: 10 шт.
Інші пропозиції GD100PIY120C6SN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD100PIY120C6SN | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Technology: Advanced Trench FS IGBT Collector current: 100A Case: C6 62mm Gate-emitter voltage: ±20V Pulsed collector current: 200A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Mechanical mounting: screw Type of module: IGBT |
товар відсутній |