GD100SGY120D6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Topology: single transistor
Case: D6
Semiconductor structure: single transistor
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис GD100SGY120D6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V, Collector current: 100A, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Topology: single transistor, Case: D6, Semiconductor structure: single transistor, Electrical mounting: screw, Type of semiconductor module: IGBT, Mechanical mounting: screw, Gate-emitter voltage: ±20V.