GD100SGY120D6S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис GD100SGY120D6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V, Type of module: IGBT, Semiconductor structure: single transistor, Topology: single transistor, Max. off-state voltage: 1.2kV, Collector current: 100A, Case: D6, Electrical mounting: screw, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw, кількість в упаковці: 1 шт.

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GD100SGY120D6S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of module: IGBT
Semiconductor structure: single transistor
Topology: single transistor
Max. off-state voltage: 1.2kV
Collector current: 100A
Case: D6
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
товар відсутній