Технічний опис GD10PJY120F4S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1, Case: F4.1, Collector current: 10A, Gate-emitter voltage: ±20V, Pulsed collector current: 20A, Semiconductor structure: diode/transistor, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Technology: Advanced Trench FS IGBT, Type of module: IGBT, Max. off-state voltage: 1200V.
Інші пропозиції GD10PJY120F4S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD10PJY120F4S | Виробник : STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 Case: F4.1 Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 20A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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