GD150HFY120C8S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 16 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: IGBT half-bridge
Case: C8 48mm
Max. off-state voltage: 1.2kV
кількість в упаковці: 16 шт
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Технічний опис GD150HFY120C8S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, Electrical mounting: FASTON connectors; screw, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: IGBT half-bridge, Case: C8 48mm, Max. off-state voltage: 1.2kV, кількість в упаковці: 16 шт.
Інші пропозиції GD150HFY120C8S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD150HFY120C8S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 150A Mechanical mounting: screw Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A Electrical mounting: FASTON connectors; screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Case: C8 48mm Max. off-state voltage: 1.2kV |
товар відсутній |