GD15PJY120L2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Case: L2.2
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2601.43 грн |
| 3+ | 2138.91 грн |
| 12+ | 1922.02 грн |
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Технічний опис GD15PJY120L2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Case: L2.2, Semiconductor structure: diode/transistor, Type of semiconductor module: IGBT, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 30A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT.