GD200FFY120C6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Case: C6 62mm
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Technology: Advanced Trench FS IGBT
Topology: IGBT three-phase bridge; NTC thermistor
кількість в упаковці: 10 шт
товару немає в наявності
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Технічний опис GD200FFY120C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Case: C6 62mm, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 200A, Pulsed collector current: 400A, Technology: Advanced Trench FS IGBT, Topology: IGBT three-phase bridge; NTC thermistor, кількість в упаковці: 10 шт.
Інші пропозиції GD200FFY120C6S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD200FFY120C6S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Case: C6 62mm Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor |
товару немає в наявності |