GD225HFY120C6S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD225HFY120C6S - IGBT-Modul, Halbbrücke, 368 A, 2 V, 1.229 kW, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2V
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 2V
Verlustleistung Pd: 1.229kW
Verlustleistung: 1.229kW
SVHC: To Be Advised
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 1.2kV
Dauerkollektorstrom: 368A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
IGBT-Konfiguration: Halbbrücke
productTraceability: No
usEccn: EAR99
DC-Kollektorstrom: 368A
Betriebstemperatur, max.: 150°C
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Технічний опис GD225HFY120C6S STARPOWER
Description: STARPOWER - GD225HFY120C6S - IGBT-Modul, Halbbrücke, 368 A, 2 V, 1.229 kW, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 2V, IGBT-Anschluss: Stiftbolzen, Kollektor-Emitter-Sättigungsspannung Vce(on): 2V, Verlustleistung Pd: 1.229kW, Verlustleistung: 1.229kW, SVHC: To Be Advised, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 1.2kV, Dauerkollektorstrom: 368A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 1.2kV, IGBT-Konfiguration: Halbbrücke, productTraceability: No, usEccn: EAR99, DC-Kollektorstrom: 368A, Betriebstemperatur, max.: 150°C.
Інші пропозиції GD225HFY120C6S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD225HFY120C6S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Semiconductor structure: transistor/transistor Case: C6 62mm Gate-emitter voltage: ±20V Collector current: 225A Topology: IGBT half-bridge Type of semiconductor module: IGBT Technology: Advanced Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 450A |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| GD225HFY120C6S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Semiconductor structure: transistor/transistor
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 225A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 450A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Semiconductor structure: transistor/transistor
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 225A
Topology: IGBT half-bridge
Type of semiconductor module: IGBT
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 450A
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.


