GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) LimitedDescription: SERIAL NOR FLASH
Packaging: Tape & Reel (TR)
Package / Case: 8-XDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-FO-USON8 (3x3)
Write Cycle Time - Word, Page: 60µs, 2.4ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
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Технічний опис GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH, Packaging: Tape & Reel (TR), Package / Case: 8-XDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2V, Technology: FLASH - NOR (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-FO-USON8 (3x3), Write Cycle Time - Word, Page: 60µs, 2.4ms, Memory Interface: SPI - Quad I/O, QPI, Access Time: 6 ns, Memory Organization: 16M x 8.
Інші пропозиції GD25LE128EXHIGR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD25LE128EXHIGR | Виробник : GigaDevice Semiconductor (HK) Limited |
Description: SERIAL NOR FLASH Packaging: Cut Tape (CT) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-FO-USON8 (3x3) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 |
товару немає в наявності |