GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited


DS-00600-GD25LE128E-Rev1.5.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH
Packaging: Tape & Reel (TR)
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
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Технічний опис GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited

Description: SERIAL NOR FLASH, Packaging: Tape & Reel (TR), Memory Organization: 16M x 8, Access Time: 6 ns, Memory Interface: SPI - Quad I/O, QPI, Write Cycle Time - Word, Page: 60µs, 2.4ms, Supplier Device Package: 8-FO-USON8 (3x3), Memory Format: FLASH, Clock Frequency: 133 MHz, Technology: FLASH - NOR (SLC), Voltage - Supply: 1.65V ~ 2V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 128Mbit, Mounting Type: Surface Mount, Package / Case: 8-XDFN Exposed Pad.

Інші пропозиції GD25LE128EXHIGR

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GD25LE128EXHIGR GigaDevice Semiconductor (HK) Limited DS-00600-GD25LE128E-Rev1.5.pdf Description: SERIAL NOR FLASH
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GD25LE128EXHIGR DS-00600-GD25LE128E-Rev1.5.pdf
Виробник: GigaDevice Semiconductor (HK) Limited
Description: SERIAL NOR FLASH
Memory Organization: 16M x 8
Access Time: 6 ns
Memory Interface: SPI - Quad I/O, QPI
Write Cycle Time - Word, Page: 60µs, 2.4ms
Supplier Device Package: 8-FO-USON8 (3x3)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-XDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.