GD2X100MPS06N GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 108A SOT227
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 108A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 3462.75 грн |
| 10+ | 3060.05 грн |
| 25+ | 2957.08 грн |
| 100+ | 2635.34 грн |
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Технічний опис GD2X100MPS06N GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 108A SOT227, Current - Reverse Leakage @ Vr: 5 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 108A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції GD2X100MPS06N за ціною від 2614.34 грн до 3637.89 грн
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GD2X100MPS06N | GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS |
на замовлення 153 шт: термін постачання 21-30 дні (днів) |
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GD2X100MPS06N | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 650V Load current: 108A x2 Case: SOT227B Max. forward voltage: 1.8V Electrical mounting: screw Max. load current: 231A Mechanical mounting: screw Features of semiconductor devices: MPS Technology: SiC Reverse recovery time: 10ns Max. forward impulse current: 0.44kA Kind of package: tube |
на замовлення 73 шт: термін постачання 14-30 дні (днів) |
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| GD2X100MPS06N |
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Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
Schottky Diodes & Rectifiers 650V 200A SOT-227 SiC Schottky MPS
на замовлення 153 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3629.29 грн |
| 10+ | 3282.73 грн |
| 30+ | 2759.59 грн |
| 100+ | 2620.63 грн |
| 250+ | 2614.34 грн |
| GD2X100MPS06N |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Max. forward impulse current: 0.44kA
Kind of package: tube
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 108Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 650V
Load current: 108A x2
Case: SOT227B
Max. forward voltage: 1.8V
Electrical mounting: screw
Max. load current: 231A
Mechanical mounting: screw
Features of semiconductor devices: MPS
Technology: SiC
Reverse recovery time: 10ns
Max. forward impulse current: 0.44kA
Kind of package: tube
на замовлення 73 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3637.89 грн |