GD300HFX170C2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Case: C2 62mm
Collector current: 300A
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
кількість в упаковці: 12 шт
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Технічний опис GD300HFX170C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Topology: IGBT half-bridge, Technology: Trench FS IGBT, Case: C2 62mm, Collector current: 300A, Mechanical mounting: screw, Pulsed collector current: 600A, Max. off-state voltage: 1.7kV, Electrical mounting: FASTON connectors; screw, Type of module: IGBT, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, кількість в упаковці: 12 шт.
Інші пропозиції GD300HFX170C2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD300HFX170C2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Technology: Trench FS IGBT Case: C2 62mm Collector current: 300A Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V |
товар відсутній |