GD300HFX170C2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C2 62mm
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Pulsed collector current: 600A
Topology: IGBT half-bridge
Collector current: 300A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
кількість в упаковці: 12 шт
товару немає в наявності
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Технічний опис GD300HFX170C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: C2 62mm, Max. off-state voltage: 1.7kV, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Pulsed collector current: 600A, Topology: IGBT half-bridge, Collector current: 300A, Gate-emitter voltage: ±20V, Semiconductor structure: transistor/transistor, кількість в упаковці: 12 шт.
Інші пропозиції GD300HFX170C2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD300HFX170C2S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: C2 62mm Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Pulsed collector current: 600A Topology: IGBT half-bridge Collector current: 300A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor |
товару немає в наявності |