GD300HFY120C6S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
кількість в упаковці: 10 шт
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Технічний опис GD300HFY120C6S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Case: C6 62mm, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 600A, Max. off-state voltage: 1.2kV, Technology: Advanced Trench FS IGBT, Electrical mounting: Press-in PCB; screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, кількість в упаковці: 10 шт.

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GD300HFY120C6S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: C6 62mm
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Technology: Advanced Trench FS IGBT
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
товару немає в наявності
В кошику  од. на суму  грн.