GD35PJY120F2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 35A, Case: F2.0, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 70A, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw.