Технічний опис GD400HFX170C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A, Case: C2 62mm, Semiconductor structure: transistor/transistor, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Topology: IGBT half-bridge, Technology: Trench FS IGBT, Type of module: IGBT, Max. off-state voltage: 1700V, Collector current: 400A, Gate-emitter voltage: ±20V, Pulsed collector current: 800A.
Інші пропозиції GD400HFX170C2S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD400HFX170C2S | Виробник : STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Case: C2 62mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT half-bridge Technology: Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1700V Collector current: 400A Gate-emitter voltage: ±20V Pulsed collector current: 800A |
товар відсутній |