GD400HFX170C2S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.7kV
Collector current: 400A
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Technology: Trench FS IGBT
Mechanical mounting: screw
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Технічний опис GD400HFX170C2S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge, Max. off-state voltage: 1.7kV, Collector current: 400A, Case: C2 62mm, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 800A, Technology: Trench FS IGBT, Mechanical mounting: screw.