GD450HFY120C6S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
кількість в упаковці: 10 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
кількість в упаковці: 10 шт
товару немає в наявності
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Технічний опис GD450HFY120C6S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB; screw, Type of semiconductor module: IGBT, Topology: IGBT half-bridge, Case: C6 62mm, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Technology: Advanced Trench FS IGBT, Gate-emitter voltage: ±20V, Collector current: 450A, Pulsed collector current: 900A, кількість в упаковці: 10 шт.
Інші пропозиції GD450HFY120C6S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD450HFY120C6S | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB; screw Type of semiconductor module: IGBT Topology: IGBT half-bridge Case: C6 62mm Mechanical mounting: screw Semiconductor structure: transistor/transistor Technology: Advanced Trench FS IGBT Gate-emitter voltage: ±20V Collector current: 450A Pulsed collector current: 900A |
товару немає в наявності |