GD450HTY120C7S STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 450A
Case: C7
Electrical mounting: Press-in PCB; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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Технічний опис GD450HTY120C7S STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; C7, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge x3; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 450A, Case: C7, Electrical mounting: Press-in PCB; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Technology: Advanced Trench FS IGBT, Mechanical mounting: screw.