GD50FSX65L2S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD50FSX65L2S - IGBT-Modul, Sechserpack, 89 A, 1.45 V, 258 W, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Modul
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.45V
usEccn: EAR99
IGBT-Anschluss: Lötanschluss
euEccn: NLR
Verlustleistung: 258W
Bauform - Transistor: Modul
Dauerkollektorstrom: 89A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Sechserpack
productTraceability: No
Betriebstemperatur, max.: 150°C
SVHC: To Be Advised
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Технічний опис GD50FSX65L2S STARPOWER
Description: STARPOWER - GD50FSX65L2S - IGBT-Modul, Sechserpack, 89 A, 1.45 V, 258 W, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Modul, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, hazardous: false, rohsPhthalatesCompliant: YES, Kollektor-Emitter-Sättigungsspannung: 1.45V, usEccn: EAR99, IGBT-Anschluss: Lötanschluss, euEccn: NLR, Verlustleistung: 258W, Bauform - Transistor: Modul, Dauerkollektorstrom: 89A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 650V, IGBT-Konfiguration: Sechserpack, productTraceability: No, Betriebstemperatur, max.: 150°C, SVHC: To Be Advised.
Інші пропозиції GD50FSX65L2S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD50FSX65L2S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1 Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 650V Collector current: 50A Case: L2.1 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Trench FS IGBT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. |
| GD50FSX65L2S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; Urmax: 650V; Ic: 50A; L2.1
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge OE output; NTC thermistor
Max. off-state voltage: 650V
Collector current: 50A
Case: L2.1
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.