GD50MPS12H GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 1082.96 грн |
| 10+ | 953.21 грн |
| 30+ | 788.00 грн |
| 120+ | 757.69 грн |
| 270+ | 736.54 грн |
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Технічний опис GD50MPS12H GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 92A TO247-2, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 15 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 92A, Capacitance @ Vr, F: 1835pF @ 1V, 1MHz.
Інші пропозиції GD50MPS12H за ціною від 833.54 грн до 1154.50 грн
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GD50MPS12H | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1.2KV 92A TO247-2Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 15 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 92A Capacitance @ Vr, F: 1835pF @ 1V, 1MHz |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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| GD50MPS12H |
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Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 92A TO247-2
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 92A
Capacitance @ Vr, F: 1835pF @ 1V, 1MHz
Description: DIODE SIL CARB 1.2KV 92A TO247-2
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 92A
Capacitance @ Vr, F: 1835pF @ 1V, 1MHz
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1154.50 грн |
| 10+ | 1012.25 грн |
| 25+ | 974.91 грн |
| 100+ | 864.63 грн |
| 250+ | 833.54 грн |