GD50PIY120C5SN STARPOWER SEMICONDUCTOR
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 12 шт
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Case: C5 45mm
Type of module: IGBT
Technology: Advanced Trench FS IGBT
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
кількість в упаковці: 12 шт
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Технічний опис GD50PIY120C5SN STARPOWER SEMICONDUCTOR
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw, Case: C5 45mm, Type of module: IGBT, Technology: Advanced Trench FS IGBT, Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Semiconductor structure: diode/transistor, Max. off-state voltage: 1.2kV, Collector current: 50A, Electrical mounting: Press-in PCB, Mechanical mounting: screw, кількість в упаковці: 12 шт.
Інші пропозиції GD50PIY120C5SN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD50PIY120C5SN | Виробник : STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Pulsed collector current: 100A Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Collector current: 50A Electrical mounting: Press-in PCB Mechanical mounting: screw |
товар відсутній |