GD5F1GM7UEYJGR GigaDevice Semiconductor (HK) Limited
Виробник: GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
Description: IC FLASH 1GBIT SPI/QUAD
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 600µs
Memory Interface: SPI - Quad I/O, DTR
Access Time: 7 ns
Memory Organization: 256M x 4
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Технічний опис GD5F1GM7UEYJGR GigaDevice Semiconductor (HK) Limited
Description: IC FLASH 1GBIT SPI/QUAD, Packaging: Tape & Reel (TR), Package / Case: 8-WDFN Exposed Pad, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NAND (SLC), Clock Frequency: 133 MHz, Memory Format: FLASH, Supplier Device Package: 8-WSON (6x8), Write Cycle Time - Word, Page: 600µs, Memory Interface: SPI - Quad I/O, DTR, Access Time: 7 ns, Memory Organization: 256M x 4.
Інші пропозиції GD5F1GM7UEYJGR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GD5F1GM7UEYJGR | Виробник : GigaDevice |
 NAND Flash |
товару немає в наявності |