GD5F2GQ5UEYIHR GigaDevice Semiconductor (HK) Limited

Description: LINEAR IC, Memory Organization: 512M x 4, Access Time: 9 ns, Memory Interface: SPI - Quad I/O, QPI, DTR, Write Cycle Time - Word, Page: 600µs, Supplier Device Package: 8-WSON (6x8), Memory Format: FLASH, Clock Frequency: 104 MHz, Technology: FLASH - NAND (SLC), Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 2Gbit, Mounting Type: Surface Mount, Package / Case: 8-WDFN Exposed Pad, Packaging: Tape & Reel (TR).