GD600SGX170C2S STARPOWER SEMICONDUCTOR


Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: single transistor
Case: C2 62mm
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
кількість в упаковці: 12 шт
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Технічний опис GD600SGX170C2S STARPOWER SEMICONDUCTOR

Category: IGBT modules, Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V, Gate-emitter voltage: ±20V, Collector current: 600A, Pulsed collector current: 1.2kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Technology: Trench FS IGBT, Topology: single transistor, Case: C2 62mm, Max. off-state voltage: 1.7kV, Semiconductor structure: single transistor, кількість в упаковці: 12 шт.

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GD600SGX170C2S Виробник : STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1700V
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: Trench FS IGBT
Topology: single transistor
Case: C2 62mm
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
товар відсутній