GE04MPS06E GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
| Кількість | Ціна |
|---|---|
| 3+ | 129.42 грн |
| 10+ | 108.16 грн |
| 25+ | 102.27 грн |
| 100+ | 88.11 грн |
| 250+ | 83.29 грн |
| 500+ | 79.82 грн |
| 1000+ | 75.23 грн |
Відгуки про товар
Написати відгук
Технічний опис GE04MPS06E GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 11A TO252-2, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 186pF @ 1V, 1MHz, Current - Average Rectified (Io): 11A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 650 V.
Інші пропозиції GE04MPS06E за ціною від 78.09 грн до 139.10 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GE04MPS06E | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 650V 4A TO-252-2 SiC Schottky MPS |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| GE04MPS06E | Виробник : GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 8A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO252-2 Max. forward voltage: 1.75V Max. load current: 11A Max. forward impulse current: 22A Kind of package: reel; tape |
товару немає в наявності |