GE06MPS06E GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 172.71 грн |
| 10+ | 147.76 грн |
| 25+ | 121.50 грн |
| 50+ | 111.72 грн |
| 100+ | 105.44 грн |
| 250+ | 101.95 грн |
| 500+ | 97.06 грн |
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Технічний опис GE06MPS06E GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 17A, Capacitance @ Vr, F: 279pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Cut Tape (CT), Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Discontinued at Digi-Key.
Інші пропозиції GE06MPS06E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| GE06MPS06E | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 650V 17A TO252-2Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 17A Capacitance @ Vr, F: 279pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Discontinued at Digi-Key |
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В кошику од. на суму грн. | |
 |
GE06MPS06E | GeneSiC SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO252-2 Max. forward voltage: 1.25V Max. forward impulse current: 27A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| GE06MPS06E |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 17A TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Discontinued at Digi-Key
Description: DIODE SIL CARB 650V 17A TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 17A
Capacitance @ Vr, F: 279pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.
| GE06MPS06E |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO252-2
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO252-2; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Features of semiconductor devices: MPS
Case: TO252-2
Max. forward voltage: 1.25V
Max. forward impulse current: 27A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.