GF1M/1754 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис GF1M/1754 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA, Packaging: Tape & Reel (TR).
Інші пропозиції GF1M/1754
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
GF1M/1754 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214BA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| GF1M/1754 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.