GH50H65DRB2-7AG STMicroelectronics
Виробник: STMicroelectronicsDescription: IGBT
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 912 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: H2PAK-7
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/117ns
Switching Energy: 557µJ (off)
Test Condition: 400V, 50A, 4.7Ohm, 15V
Gate Charge: 152 nC
Grade: Automotive
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 385 W
Qualification: AEC-Q101
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Технічний опис GH50H65DRB2-7AG STMicroelectronics
Description: IGBT, Packaging: Bulk, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 912 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: H2PAK-7, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/117ns, Switching Energy: 557µJ (off), Test Condition: 400V, 50A, 4.7Ohm, 15V, Gate Charge: 152 nC, Grade: Automotive, Current - Collector (Ic) (Max): 108 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 385 W, Qualification: AEC-Q101.
Інші пропозиції GH50H65DRB2-7AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GH50H65DRB2-7AG | Виробник : STMicroelectronics |
IGBTs Automotive trench gate field-stop 650 V, 50 A high-speed IGBT freewheeling diode |
товару немає в наявності |