GKI04048 Sanken
Виробник: SankenDescription: MOSFET N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.1W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
на замовлення 2416 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.99 грн |
| 10+ | 100.56 грн |
| 100+ | 78.37 грн |
| 500+ | 60.76 грн |
| 1000+ | 47.97 грн |
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Технічний опис GKI04048 Sanken
Description: MOSFET N-CH 40V 14A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V, Power Dissipation (Max): 3.1W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 650µA, Supplier Device Package: 8-DFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V.
Інші пропозиції GKI04048
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GKI04048 | Виробник : Sanken Electric Co. |
Trans MOSFET N-CH 40V 14A 8-Pin DFN EP |
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GKI04048 | Виробник : Allegro Microsystems |
Trans MOSFET N-CH 40V 14A 8-Pin DFN EP |
товар відсутній |
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GKI04048 | Виробник : Sanken |
Description: MOSFET N-CH 40V 14A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: 8-DFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
товар відсутній |