GKI04076 Sanken


gki04076_ds_en.pdf
Виробник: Sanken
Description: MOSFET N-CH 40V 11A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
4+87.98 грн
10+75.87 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
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Технічний опис GKI04076 Sanken

Description: MOSFET N-CH 40V 11A 8DFN, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 350µA, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

Інші пропозиції GKI04076

Фото Назва Виробник Інформація Доступність Ціна
GKI04076 GKI04076 Sanken gki04076_ds_en.pdf Description: MOSFET N-CH 40V 11A 8DFN
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику  од. на суму  грн.
GKI04076 gki04076_ds_en.pdf
Виробник: Sanken
Description: MOSFET N-CH 40V 11A 8DFN
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
В кошику  од. на суму  грн.