GL1MR13 Diotec Semiconductor
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 1KV 1A DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -50°C ~ 175°C
Supplier Device Package: DO-213AA, MINI-MELF
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 3.76 грн |
| 20000+ | 3.59 грн |
| 40000+ | 3.56 грн |
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Технічний опис GL1MR13 Diotec Semiconductor
Description: DIODE GEN PURP 1KV 1A DO213AA, Current - Reverse Leakage @ Vr: 5 µA @ 1 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -50°C ~ 175°C, Supplier Device Package: DO-213AA, MINI-MELF, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AA, Packaging: Tape & Reel (TR).
Інші пропозиції GL1MR13
| Фото | Назва | Виробник | Інформація |
Доступність |
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GL1MR13 | Виробник : Diotec Semiconductor |
Description: IC Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1 kV |
товару немає в наявності |
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GL1MR13 | Виробник : Diotec Semiconductor |
Rectifiers Diode, MiniMelf, 1000V, 1A |
товару немає в наявності |