GNP1150TCA-ZE2 ROHM
Виробник: ROHM
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 2.7nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080AK
Anzahl der Pins: 8Pin(s)
Produktpalette: EcoGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.15ohm
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 205.38 грн |
| 500+ | 175.00 грн |
| 1000+ | 157.40 грн |
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Технічний опис GNP1150TCA-ZE2 ROHM
Description: ECOGAN, 650V 11A DFN8080AK, E-MO, Supplier Device Package: DFN8080AK, Vgs(th) (Max) @ Id: 2.4V @ 18mA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +6V, -10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V, Part Status: Active.
Інші пропозиції GNP1150TCA-ZE2 за ціною від 157.40 грн до 451.22 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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GNP1150TCA-ZE2 | ROHM |
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 2.7nC SVHC: To Be Advised Bauform - Transistor: DFN8080AK Anzahl der Pins: 8Pin(s) Produktpalette: EcoGaN Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.15ohm |
на замовлення 3480 шт: термін постачання 21-31 дні (днів) |
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GNP1150TCA-ZE2 | ROHM Semiconductor |
GaN FETs DFN8X8 650V 11A GAN |
на замовлення 7292 шт: термін постачання 21-30 дні (днів) |
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GNP1150TCA-ZE2 | Rohm Semiconductor |
Description: ECOGAN, 650V 11A DFN8080AK, E-MO Packaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080AK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V |
на замовлення 2795 шт: термін постачання 21-31 дні (днів) |
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| GNP1150TCA-ZE2 |
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Виробник: ROHM
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 2.7nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080AK
Anzahl der Pins: 8Pin(s)
Produktpalette: EcoGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.15ohm
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 2.7nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080AK
Anzahl der Pins: 8Pin(s)
Produktpalette: EcoGaN Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.15ohm
на замовлення 3480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 396.26 грн |
| 10+ | 285.11 грн |
| 100+ | 205.38 грн |
| 500+ | 175.00 грн |
| 1000+ | 157.40 грн |
| GNP1150TCA-ZE2 |
|
Виробник: ROHM Semiconductor
GaN FETs DFN8X8 650V 11A GAN
GaN FETs DFN8X8 650V 11A GAN
на замовлення 7292 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 440.55 грн |
| 10+ | 297.71 грн |
| 25+ | 247.83 грн |
| 100+ | 181.56 грн |
| 500+ | 162.23 грн |
| GNP1150TCA-ZE2 |
|
Виробник: Rohm Semiconductor
Description: ECOGAN, 650V 11A DFN8080AK, E-MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080AK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
Description: ECOGAN, 650V 11A DFN8080AK, E-MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080AK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
на замовлення 2795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.22 грн |
| 10+ | 291.22 грн |
| 100+ | 210.05 грн |
| 500+ | 170.59 грн |