GP30M-E3/73 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
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Технічний опис GP30M-E3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO201AD, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB).
Інші пропозиції GP30M-E3/73
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GP30M-E3/73 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 3A DO201AD Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V |
товару немає в наявності |
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GP30M-E3/73 | Виробник : Vishay General Semiconductor |
Rectifiers 3.0 Amp 1000 Volt 125 Amp IFSM |
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