| Кількість | Ціна |
|---|---|
| 2+ | 304.39 грн |
| 10+ | 167.41 грн |
| 120+ | 118.85 грн |
| 510+ | 104.79 грн |
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Технічний опис GP3D005A170B SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 347pF @ 1V, 1MHz, Current - Average Rectified (Io): 21A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 1700.
Інші пропозиції GP3D005A170B за ціною від 188.13 грн до 533.24 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GP3D005A170B | SemiQ |
 Description: DIODE SIL CARB 1700V 21A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 347pF @ 1V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1700 |
на замовлення 1769 шт: термін постачання 21-31 дні (днів) |
|
| GP3D005A170B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
на замовлення 1769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 533.24 грн |
| 30+ | 296.08 грн |
| 120+ | 248.28 грн |
| 510+ | 200.12 грн |
| 1020+ | 188.13 грн |