| Кількість | Ціна |
|---|---|
| 1+ | 437.46 грн |
| 10+ | 285.31 грн |
| 120+ | 247.39 грн |
| 10020+ | 246.69 грн |
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Технічний опис GP3D030A065B SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Інші пропозиції GP3D030A065B за ціною від 268.60 грн до 474.17 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
 |
GP3D030A065B | SemiQ |
 Description: DIODE SIL CARB 650V 30A TO247-2Current - Reverse Leakage @ Vr: 75 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
|
| GP3D030A065B |
|
Виробник: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 650V 30A TO247-2
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 474.17 грн |
| 30+ | 268.60 грн |