GP3T080A120H SemiQ

Description: GEN3 1200V, 80M SIC MOSFET, TO-2, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V.