Технічний опис GPA807H TAIWAN SEMICONDUCTOR
Description: DIODE GEN PURP 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 50pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Інші пропозиції GPA807H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GPA807H | Виробник : Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 8A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
|
 |
GPA807H | Виробник : Taiwan Semiconductor |
Rectifiers 8A, 1000V, Standard Recovery Rectifier |
товару немає в наявності |