GS-065-004-6-L-MR Infineon Technologies Canada Inc.
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 250+ | 123.65 грн |
| 500+ | 110.16 грн |
| 750+ | 102.52 грн |
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Технічний опис GS-065-004-6-L-MR Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V.
Інші пропозиції GS-065-004-6-L-MR за ціною від 71.19 грн до 277.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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GS-065-004-6-L-MR | Infineon Technologies |
 GaN FETs LEGACY GAN SYSTEMS |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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GS-065-004-6-L-MR | Infineon Technologies Canada Inc. |
Description: GS-065-004-6-L-MR Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.6V @ 1mA Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 852 шт: термін постачання 21-31 дні (днів) |
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| GS-065-004-6-L-MR |
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Виробник: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
GaN FETs LEGACY GAN SYSTEMS
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 244.22 грн |
| 10+ | 157.25 грн |
| 100+ | 104.31 грн |
| 500+ | 86.69 грн |
| 1000+ | 74.71 грн |
| 2500+ | 71.19 грн |
| GS-065-004-6-L-MR |
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: GS-065-004-6-L-MR
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Rds On (Max) @ Id, Vgs: 455mOhm @ 1.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 277.53 грн |
| 10+ | 174.86 грн |
| 100+ | 139.79 грн |