GS-065-008-6-L-MR Infineon Technologies Canada Inc.
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 186.36 грн |
| 500+ | 175.52 грн |
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Технічний опис GS-065-008-6-L-MR Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.7mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V.
Інші пропозиції GS-065-008-6-L-MR за ціною від 197.54 грн до 392.10 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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GS-065-008-6-L-MR | Infineon Technologies Canada Inc. |
Description: GS-065-008-6-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1.7mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V |
на замовлення 942 шт: термін постачання 21-31 дні (днів) |
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GS-065-008-6-L-MR | Infineon Technologies |
 GaN FETs LEGACY GAN SYSTEMS |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| GS-065-008-6-L-MR |
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
на замовлення 942 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.10 грн |
| 10+ | 264.68 грн |
| 100+ | 197.54 грн |
| GS-065-008-6-L-MR |
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Виробник: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
GaN FETs LEGACY GAN SYSTEMS
на замовлення 171 шт:
термін постачання 21-30 дні (днів)