GS-065-014-6-LR-MR Infineon Technologies
Виробник: Infineon Technologies
GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
| Кількість | Ціна |
|---|---|
| 1+ | 402.10 грн |
| 10+ | 316.92 грн |
| 100+ | 222.72 грн |
| 500+ | 198.06 грн |
| 1000+ | 169.86 грн |
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Технічний опис GS-065-014-6-LR-MR Infineon Technologies
Description: GS-065-014-6-LR-MR, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc), Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 3mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V.
Інші пропозиції GS-065-014-6-LR-MR за ціною від 280.12 грн до 539.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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GS-065-014-6-LR-MR | Infineon Technologies Canada Inc. |
Description: GS-065-014-6-LR-MR Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 3mA Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -10V |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
|
| GS-065-014-6-LR-MR |
Виробник: Infineon Technologies Canada Inc.
Description: GS-065-014-6-LR-MR
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Description: GS-065-014-6-LR-MR
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 539.19 грн |
| 10+ | 368.95 грн |
| 100+ | 280.12 грн |