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GS-065-060-5-T-A-TR GaN Systems


Виробник: GaN Systems
GaNPX Top-side cooled
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Технічний опис GS-065-060-5-T-A-TR GaN Systems

Description: GS-065-060-5-T-A-TR, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 16.4mA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V, Qualification: AEC-Q101.

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GS-065-060-5-T-A-TR GS-065-060-5-T-A-TR Виробник : Infineon Technologies Canada Inc. Description: GS-065-060-5-T-A-TR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 16.4mA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Qualification: AEC-Q101
товар відсутній
GS-065-060-5-T-A-TR GS-065-060-5-T-A-TR Виробник : GaN Systems MOSFET Automotive 650V, 60A, GaN E-mode, GaNPX package, Top-side cooled
товар відсутній