GS0650111LMRXUSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
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Технічний опис GS0650111LMRXUSA1 Infineon Technologies
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 11A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 2.2nC, Bauform - Transistor: PDFN, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Drain-Source-Durchgangswiderstand: 0.19ohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції GS0650111LMRXUSA1 за ціною від 178.51 грн до 388.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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GS0650111LMRXUSA1 | INFINEON |
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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GS0650111LMRXUSA1 | INFINEON |
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.2nC Bauform - Transistor: PDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.19ohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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GS0650111LMRXUSA1 | Infineon Technologies |
Description: GS-065-011-1-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
на замовлення 462 шт: термін постачання 21-31 дні (днів) |
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| GS0650111LMRXUSA1 |
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Виробник: INFINEON
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 181.73 грн |
| GS0650111LMRXUSA1 |
|
Виробник: INFINEON
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.2nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.19ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.2nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.19ohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 380.72 грн |
| 10+ | 254.09 грн |
| 100+ | 181.73 грн |
| GS0650111LMRXUSA1 |
|
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 388.54 грн |
| 10+ | 249.38 грн |
| 100+ | 178.51 грн |