GS61008P-MR Infineon Technologies
Виробник: Infineon Technologies
Description: GS61008P-MR
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 250+ | 358.63 грн |
| 500+ | 327.89 грн |
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Технічний опис GS61008P-MR Infineon Technologies
Description: GS61008P-MR, Packaging: Tape & Reel (TR), Package / Case: 5-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 7mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V.
Інші пропозиції GS61008P-MR за ціною від 293.96 грн до 658.01 грн
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GS61008P-MR | Infineon Technologies |
Description: GS61008P-MR Packaging: Cut Tape (CT) Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V |
на замовлення 1110 шт: термін постачання 21-31 дні (днів) |
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GS61008P-MR | Infineon Technologies |
 GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled |
на замовлення 1871 шт: термін постачання 21-30 дні (днів) |
|
| GS61008P-MR |
Виробник: Infineon Technologies
Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Description: GS61008P-MR
Packaging: Cut Tape (CT)
Package / Case: 5-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
на замовлення 1110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 649.54 грн |
| 10+ | 428.78 грн |
| 100+ | 404.49 грн |
| GS61008P-MR |
|
Виробник: Infineon Technologies
GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
GaN FETs 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
на замовлення 1871 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 658.01 грн |
| 10+ | 482.01 грн |
| 100+ | 369.91 грн |
| 500+ | 310.84 грн |
| 1000+ | 293.96 грн |