GS61008PMRXUSA1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 65A; Idm: 140A; GaNPX, Type of transistor: N-JFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: HEMT, Drain-source voltage: 100V, Drain current: 65A, Pulsed drain current: 140A, Case: GaNPX, Gate-source voltage: -10...7V, On-state resistance: 17.5mΩ, Mounting: SMD, Gate charge: 8nC, Kind of package: tape, Kind of channel: enhancement.