GS61008T-TR Infineon Technologies

Description: GS61008T-TR, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs(th) (Max) @ Id: 1.3V @ 7mA, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Packaging: Tape & Reel (TR).