GS66502BMRXUSA1 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 6.3A; Idm: 15A; GaNPX, Type of transistor: N-JFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: HEMT, Drain-source voltage: 650V, Drain current: 6.3A, Pulsed drain current: 15A, Case: GaNPX, Gate-source voltage: -10...7V, On-state resistance: 516mΩ, Mounting: SMD, Gate charge: 1.6nC, Kind of package: tape, Kind of channel: enhancement.