GS66508T-TR Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 1573.05 грн |
| 10+ | 1268.51 грн |
| 100+ | 1017.06 грн |
| 3000+ | 936.01 грн |
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Технічний опис GS66508T-TR Infineon Technologies
Description: GS66508T-TR, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 7mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V.
Інші пропозиції GS66508T-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
GS66508T-TR | Infineon Technologies Canada Inc. |
Description: GS66508T-TR Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| GS66508T-TR |
Виробник: Infineon Technologies Canada Inc.
Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
Description: GS66508T-TR
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 9A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.