GSFC0201 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.70A, 25V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис GSFC0201 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.70A, 25V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції GSFC0201 за ціною від 3.24 грн до 8.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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GSFC0201 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 0.70A, 25V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
|
| GSFC0201 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.70A, 25V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 0.70A, 25V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 550mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 37+ | 8.54 грн |
| 58+ | 5.24 грн |
| 100+ | 3.24 грн |