GSFC0204 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
| Кількість | Ціна |
|---|---|
| 45+ | 6.99 грн |
| 69+ | 4.34 грн |
| 80+ | 3.77 грн |
| 100+ | 2.97 грн |
| 250+ | 2.70 грн |
| 500+ | 2.54 грн |
| 1000+ | 2.36 грн |
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Технічний опис GSFC0204 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції GSFC0204
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
GSFC0204 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 4A, 20V, SInput Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| GSFC0204 |
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Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.


