GSFC02A05 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5.00A, -2
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3L
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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Технічний опис GSFC02A05 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5.00A, -2, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-3L, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.6W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.
Інші пропозиції GSFC02A05 за ціною від 5.72 грн до 26.41 грн
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GSFC02A05 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -5.00A, -2 Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3L Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
на замовлення 5415 шт: термін постачання 21-31 дні (днів) |
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| GSFC02A05 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5.00A, -2
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3L
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Description: MOSFET, P-CH, SINGLE, -5.00A, -2
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3L
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
на замовлення 5415 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.41 грн |
| 16+ | 18.92 грн |
| 25+ | 17.05 грн |
| 100+ | 11.05 грн |
| 250+ | 9.31 грн |
| 500+ | 7.56 грн |
| 1000+ | 5.72 грн |