GSFC3415 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.00A, -2
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
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Технічний опис GSFC3415 Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.00A, -2, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23.
Інші пропозиції GSFC3415 за ціною від 5.53 грн до 24.08 грн
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GSFC3415 | Good-Ark Semiconductor |
Description: MOSFET, P-CH, SINGLE, -4.00A, -2 Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2523 шт: термін постачання 21-31 дні (днів) |
|
| GSFC3415 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.00A, -2
Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET, P-CH, SINGLE, -4.00A, -2
Input Capacitance (Ciss) (Max) @ Vds: 1181.1 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.08 грн |
| 21+ | 14.51 грн |
| 25+ | 11.97 грн |
| 100+ | 8.52 грн |
| 250+ | 7.16 грн |
| 500+ | 6.33 грн |
| 1000+ | 5.53 грн |