GSFD06C20 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 60V 19A TO252-4
Part Status: Active
Supplier Device Package: TO-252-4
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 20.1W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 4+ | 96.30 грн |
| 10+ | 56.54 грн |
| 25+ | 47.18 грн |
| 100+ | 34.30 грн |
| 250+ | 29.40 грн |
| 500+ | 26.38 грн |
| 1000+ | 23.46 грн |
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Технічний опис GSFD06C20 Good-Ark Semiconductor
Description: MOSFET N/P-CH 60V 19A TO252-4, Part Status: Active, Supplier Device Package: TO-252-4, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 20.1W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Packaging: Tape & Reel (TR).
Інші пропозиції GSFD06C20
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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GSFD06C20 | Good-Ark Semiconductor |
Description: MOSFET N/P-CH 60V 19A TO252-4 Part Status: Active Supplier Device Package: TO-252-4 Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 20.1W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| GSFD06C20 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET N/P-CH 60V 19A TO252-4
Part Status: Active
Supplier Device Package: TO-252-4
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 20.1W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 60V 19A TO252-4
Part Status: Active
Supplier Device Package: TO-252-4
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 30V, 1810pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc), 17A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 20.1W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.