
GSFN0982 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 48A, 100V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 50 V
на замовлення 2878 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
3+ | 114.28 грн |
10+ | 69.17 грн |
25+ | 58.45 грн |
100+ | 43.45 грн |
250+ | 37.87 грн |
500+ | 34.45 грн |
1000+ | 31.09 грн |
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Технічний опис GSFN0982 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 100V,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PPAK (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 50 V.
Інші пропозиції GSFN0982
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GSFN0982 | Виробник : Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 50 V |
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